Manufacturer Part Number
STP10NK60Z
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor
Designed for high-voltage, high-current switching applications
Product Features and Performance
600V drain-source voltage
10A continuous drain current
Low on-resistance of 750mΩ
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Robust design with high ruggedness
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable high-voltage operation
Wide temperature tolerance for diverse applications
Fast switching for high-frequency circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 750mΩ @ 4.5A, 10V
Continuous Drain Current (Id): 10A @ 25°C
Input Capacitance (Ciss): 1370pF @ 25V
Power Dissipation (Tc): 115W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole TO-220 package
Compatible with standard MOSFET driver circuits
Application Areas
High-voltage, high-current switching applications
Power supplies, motor drives, industrial controls
Automotive, industrial, and consumer electronics
Product Lifecycle
Current production product
Replacement and upgrade options available from STMicroelectronics
Key Reasons to Choose
Excellent power efficiency and performance
Reliable high-voltage operation
Wide temperature tolerance for diverse applications
Fast switching for high-frequency circuits
Robust design with high ruggedness
Manufactured to high quality standards
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