Manufacturer Part Number
STP10NK70Z
Manufacturer
STMicroelectronics
Introduction
The STP10NK70Z is a high-voltage, high-power N-channel MOSFET transistor suitable for a wide range of power electronic applications.
Product Features and Performance
High drain-to-source breakdown voltage of 700V
Low on-resistance of 850mΩ at 4.5A, 10V
High continuous drain current of 8.6A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 2000pF at 25V
High power dissipation of 150W at Tc
Product Advantages
Excellent performance in high-voltage and high-power applications
Suitable for diverse power electronic circuits
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 700V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 850mΩ @ 4.5A, 10V
Continuous Drain Current (Id): 8.6A @ 25°C
Input Capacitance (Ciss): 2000pF @ 25V
Power Dissipation (Ptot): 150W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220 package for reliable thermal management
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial controls
Automotive electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance in high-voltage and high-power applications
Reliable and robust design
Wide operating temperature range
Suitable for diverse power electronic circuits
RoHS3 compliance for environmental safety