Manufacturer Part Number
STP110N7F6
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high current capability.
Product Features and Performance
Low on-resistance of 6.5 mΩ at 55 A, 10 V
Supports high continuous drain current of 110 A at 25°C
Wide operating temperature range of -55°C to 175°C
Low gate charge of 100 nC at 10 V
Robust design with high drain-source breakdown voltage of 68 V
Product Advantages
Excellent efficiency and low power loss
High current handling capability
Reliable operation in wide temperature range
Suitable for high-power switching applications
Key Technical Parameters
Drain-Source Voltage (VDS): 68 V
Gate-Source Voltage (VGS): ±20 V
On-Resistance (RDS(on)): 6.5 mΩ @ 55 A, 10 V
Drain Current (ID): 110 A @ 25°C
Input Capacitance (CISS): 5850 pF @ 25 V
Power Dissipation (Pd): 176 W @ Tc
Quality and Safety Features
ROHS3 compliant
TO-220 package for reliable thermal management
Meets industrial quality and safety standards
Compatibility
Suitable for high-power switching applications such as motor drives, power supplies, and industrial controls
Application Areas
Industrial automation and control
Power electronics
Electric vehicles
Renewable energy systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from STMicroelectronics or other manufacturers.
Key Reasons to Choose This Product
Excellent performance and efficiency with low on-resistance
High current capability and wide operating temperature range
Robust design and reliable operation
Compatibility with a wide range of high-power switching applications
Availability and support from a reputable manufacturer, STMicroelectronics
STP110N10F7 MOSSTMicroelectronics