Manufacturer Part Number
STF11NM65N
Manufacturer
STMicroelectronics
Introduction
High-performance power MOSFET transistor
Product Features and Performance
High breakdown voltage of 650V
Low on-resistance of 455mΩ @ 5.5A, 10V
Continuous drain current of 11A at 25°C
Operating temperature up to 150°C
Fast switching performance
Product Advantages
Excellent power handling capability
Improved efficiency and thermal management
Suitable for high-voltage, high-current applications
Reliable and durable design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 455mΩ @ 5.5A, 10V
Continuous Drain Current (Id): 11A @ 25°C
Input Capacitance (Ciss): 800pF @ 50V
Power Dissipation (Tc): 25W
Quality and Safety Features
RoHS3 compliant
Reliable and robust TO-220FP package
Compatibility
Suitable for a wide range of high-voltage, high-current power electronics applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Renewable energy systems
Automotive electronics
Product Lifecycle
Current product offering
Availability of replacements or upgrades may vary, check with manufacturer
Several Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable design
Suitable for high-voltage, high-current applications
Wide operating temperature range
RoHS3 compliance for environmental sustainability
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