Manufacturer Part Number
STF11NM50N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Part of the MDmesh II series
Product Features and Performance
500V drain-source voltage
5A continuous drain current
470mΩ maximum on-resistance
High power density and efficiency
Low gate charge for fast switching
Product Advantages
Excellent power conversion efficiency
Robust and reliable design
Suitable for a wide range of power applications
Key Technical Parameters
Drain-source voltage (Vdss): 500V
Gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 470mΩ
Continuous drain current (Id): 8.5A
Input capacitance (Ciss): 547pF
Power dissipation (Tc): 25W
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety
Compatibility
Through-hole mounting (TO-220-3 package)
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
High efficiency and power density
Robust and reliable design
Wide range of applications
Compatibility with common power electronics systems
Long-term availability and support from the manufacturer
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