Manufacturer Part Number
STF11NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Part of the MDmesh II series
Product Features and Performance
600V drain-to-source voltage
10A continuous drain current at 25°C
Low on-resistance of 450mΩ at 5A, 10V
Fast switching characteristics
Low gate charge for efficient operation
Product Advantages
Excellent power efficiency
High reliability and robustness
Suitable for various power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 450mΩ @ 5A, 10V
Continuous Drain Current (Id): 10A @ 25°C
Input Capacitance (Ciss): 850pF @ 50V
Power Dissipation (Ptot): 25W @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-220FP package for reliable thermal performance
Compatibility
Suitable for various power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Induction heating
Welding equipment
Product Lifecycle
Current product, no indication of discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Excellent power efficiency and performance
Robust and reliable design
Suitable for a wide range of power conversion applications
RoHS3 compliance for environmental sustainability
STF11NM60STMicroelectronics
STF12A80SEMIWELL