Manufacturer Part Number
STF12N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
600V breakdown voltage
Low on-resistance (450mΩ @ 4.5A, 10V)
High current capability (9A continuous drain current at 25°C)
Low gate charge (16nC @ 10V)
High transconductance
Fast switching speed
Product Advantages
Excellent power conversion efficiency
Improved thermal management
Reliable and robust performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 450mΩ @ 4.5A, 10V
Continuous Drain Current (Id): 9A @ 25°C
Input Capacitance (Ciss): 538pF @ 100V
Power Dissipation (Tc): 25W
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switched-mode power supplies
Motor drives
Lighting ballasts
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No plans for discontinuation, replacements or upgrades at this time
Key Reasons to Choose This Product
Excellent power handling capacity and efficiency
Robust and reliable performance
Ease of integration into power conversion systems
Compliance with key safety and environmental standards