Manufacturer Part Number
STF12NK60Z
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor for power applications
Product Features and Performance
Operates at up to 150°C junction temperature
600V drain-to-source voltage rating
Low on-resistance (640mΩ max. @ 5A, 10V)
High current capability (10A continuous drain current @ 25°C)
Low gate charge (59nC max. @ 10V)
Low input capacitance (1740pF max. @ 25V)
Product Advantages
Suitable for high-power, high-voltage applications
Excellent switching performance
Efficient power conversion
Reliable and durable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 640mΩ max. @ 5A, 10V
Drain Current (Id): 10A continuous @ 25°C
Power Dissipation (Pd): 35W @ Tc
Input Capacitance (Ciss): 1740pF max. @ 25V
Gate Charge (Qg): 59nC max. @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Suitable for high-temperature operation
Compatibility
Through-hole mounting (TO-220-3 package)
Suitable for use in a wide range of power electronic applications
Application Areas
Power converters
Motor drives
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and current capabilities
Excellent power efficiency and switching performance
Reliable and durable operation at high temperatures
Compatibility with a wide range of power electronic applications
RoHS3 compliance for environmental sustainability
STF12NK65ZSTMicroelectronics
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