Manufacturer Part Number
STF12N65M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with MDmesh M2 technology
Product Features and Performance
High blocking voltage up to 650V
Low on-resistance down to 500mΩ
Low gate charge for fast and efficient switching
Designed for high-frequency, high-efficiency power conversion applications
Product Advantages
Excellent power handling capabilities
Efficient switching performance
Reliable and robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 500mΩ @ 4A, 10V
Continuous Drain Current (Id): 8A @ 25°C
Input Capacitance (Ciss): 535pF @ 100V
Power Dissipation (Ptot): 25W @ Tc
Quality and Safety Features
RoHS3 compliant
Qualified to JEDEC standards
Reliable and robust design
Compatibility
Compatible with various high-frequency, high-efficiency power conversion applications
Application Areas
Switching power supplies
Inverters
Motor drives
SMPS
Other high-frequency power conversion applications
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
High blocking voltage for robust operation
Low on-resistance for efficient power handling
Fast and efficient switching performance
Reliable and robust design for long-term reliability
Wide operating temperature range of -55°C to 150°C
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