Manufacturer Part Number
STD7N65M2
Manufacturer
STMicroelectronics
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
High voltage, up to 650V drain-source voltage
Low on-resistance, 1.15Ω max. at 2.5A, 10V
High current capability, 5A continuous drain current at 25°C
Low gate charge, 9nC max. at 10V
Wide operating temperature range, -55°C to 150°C
Product Advantages
Excellent power efficiency
Reliable and robust performance
Suitable for high voltage, high current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 1.15Ω max. at 2.5A, 10V
Continuous Drain Current (Id): 5A at 25°C
Input Capacitance (Ciss): 270pF max. at 100V
Power Dissipation (Pd): 60W at Tc
Quality and Safety Features
ROHS3 compliant
Supplied in DPAK package
Reliable and robust design for industrial applications
Compatibility
Universal compatibility with high voltage, high current circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Welding equipment
Industrial automation and control
Product Lifecycle
Currently available, no plans for discontinuation. Replacements and upgrades available if needed.
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and robust design for industrial use
Wide operating temperature range
Comprehensive technical parameters to meet design requirements
Compatibility with high voltage, high current applications
