Manufacturer Part Number
STD7N52K3
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Supports high voltage up to 525V
Low on-resistance (RDS(on)) of 980 mΩ
Capable of handling up to 6A of continuous drain current
Fast switching speed and low gate charge for efficient operation
Wide operating temperature range up to 150°C
Product Advantages
Excellent power efficiency and thermal management
Rugged and reliable design for industrial and automotive applications
Seamless integration with other system components
Key Technical Parameters
Drain-source voltage (VDS): 525V
Gate-source voltage (VGS): ±30V
On-resistance (RDS(on)): 980 mΩ
Continuous drain current (ID): 6A
Input capacitance (Ciss): 737 pF
Power dissipation (Pd): 90W
Quality and Safety Features
RoHS-3 compliant for environmental responsibility
Durable DPAK package for robust performance
Compatibility
Suitable for a wide range of power conversion and motor control applications
Application Areas
Industrial equipment
Automotive systems
Power supplies
Inverters and motor drives
Product Lifecycle
Currently in active production
No planned discontinuation or obsolescence
Several Key Reasons to Choose This Product
Excellent power handling and efficiency for demanding applications
Reliable and rugged design for harsh environments
Seamless integration with other system components
Cost-effective solution for high-volume applications
Backed by STMicroelectronics' expertise and global support network
STD7N60DM2STMicroelectronicsMOSFET N-CH 600V 6A DPAK