Manufacturer Part Number
STD7N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET with 600V breakdown voltage and low on-resistance.
Product Features and Performance
600V breakdown voltage
Low on-resistance (950mΩ typical)
High current capability (5A continuous drain current)
Fast switching speed
Low gate charge (8.8nC typical)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent efficiency and thermal management
Reduced power losses
Reliable and robust design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 950mΩ @ 2.5A, 10V
Continuous Drain Current (Id): 5A @ 25°C
Input Capacitance (Ciss): 271pF @ 100V
Power Dissipation (Tc): 60W
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Robust DPAK package
Compatibility
Suitable for a wide range of high-voltage, high-power applications, including:
Switch-mode power supplies
Motor drives
Inverters
Power conversion equipment
Application Areas
Industrial electronics
Household appliances
Lighting
Automotive electronics
Product Lifecycle
The STD7N60M2 is an active and widely used product in the STMicroelectronics portfolio. There are no plans for discontinuation, and replacement or upgrade options are available.
Key Reasons to Choose This Product
High efficiency and low power losses due to low on-resistance
Reliable and robust design for demanding applications
Wide operating temperature range for versatile usage
Fast switching speed for improved system performance
Compact and easy-to-use DPAK package for space-constrained designs
STD7N65STMicroelectronics