Manufacturer Part Number
STD7LN80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel power MOSFET
Product Features and Performance
800V drain-source voltage rating
Low on-resistance of 1.15Ω at 2.5A, 10V
High current capability of 5A at 25°C
Low input capacitance of 270pF at 100V
High power dissipation of 85W at 25°C
Product Advantages
Excellent switching performance
High voltage and current handling
High power density
Compact DPAK package
Key Technical Parameters
Drain-source voltage (Vdss): 800V
Gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 1.15Ω at 2.5A, 10V
Continuous drain current (Id): 5A at 25°C
Input capacitance (Ciss): 270pF at 100V
Power dissipation: 85W at 25°C
Quality and Safety Features
RoHS3 compliant
Solid automotive-grade quality
Compatibility
Suitable for high-voltage, high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Home appliances
Industrial control systems
Product Lifecycle
Current production
No known discontinuation plans
Replacement/upgrade options available
Key Reasons to Choose
Excellent high-voltage and high-current performance
Low on-resistance for high efficiency
Compact DPAK package for space-constrained designs
Robust and reliable for demanding applications
Automotive-grade quality and RoHS compliance
