Manufacturer Part Number
STD7N60DM2
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel power MOSFET in D-PAK (TO-252) package
Part of the MDmesh DM2 series
Product Features and Performance
600V drain-source voltage
Up to 6A continuous drain current at 25°C
Very low on-resistance of 900mΩ @ 3A, 10V
Extremely low input capacitance of 324pF @ 100V
60W maximum power dissipation
Product Advantages
Excellent power-switching performance
High reliability and ruggedness
Compact and thermally efficient D-PAK package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 900mΩ @ 3A, 10V
Continuous Drain Current (Id): 6A @ 25°C
Input Capacitance (Ciss): 324pF @ 100V
Power Dissipation (Pd): 60W
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-power switching applications
Compatibility
Compatible with various high-voltage, high-power electronic circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Inductive lighting ballasts
Industrial controls
Uninterruptible power supplies (UPS)
Product Lifecycle
Current product, no discontinuation plans
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
Excellent power-switching performance with very low on-resistance and input capacitance
Highly reliable and rugged design for demanding applications
Compact and thermally efficient D-PAK package
Wide operating temperature range of -55°C to 150°C
Long product lifecycle with replacement options available
