Manufacturer Part Number
STD4N90K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance power MOSFET transistor
Part of the MDmesh series
Product Features and Performance
900V drain-source voltage
3A continuous drain current at 25°C
Low on-resistance of 2.1Ω at 1A, 10V
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 5.3nC at 10V
Product Advantages
Excellent power efficiency and thermal performance
Suitable for high-voltage, high-power applications
Robust and reliable design
Key Technical Parameters
Drain-source voltage (Vdss): 900V
Gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 2.1Ω at 1A, 10V
Drain current (Id): 3A at 25°C
Input capacitance (Ciss): 173pF at 100V
Power dissipation (Ptot): 60W at Tc
Quality and Safety Features
RoHS3 compliant
Robust DPAK package
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Lighting and ballast systems
Product Lifecycle
This product is currently in production and is not nearing discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Fast switching speed and low gate charge for enhanced performance
Wide operating temperature range for versatile applications
Robust and reliable DPAK package for durability