Manufacturer Part Number
STD4LN80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, energy-efficient N-channel MOSFET for power conversion and motor control applications
Product Features and Performance
800V drain-source voltage
Low on-resistance of 2.6Ω at 1A, 10V
Wide operating temperature range of -55°C to 150°C
High continuous drain current of 3A at 25°C
Low input capacitance of 122pF at 100V
Maximum power dissipation of 60W at 25°C
Product Advantages
Efficient power conversion with low on-resistance
Reliable operation in harsh environments
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-source voltage (Vdss): 800V
Gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 2.6Ω at 1A, 10V
Continuous drain current (Id): 3A at 25°C
Input capacitance (Ciss): 122pF at 100V
Power dissipation (Pd): 60W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Surface mount DPAK package
Tape and reel packaging
Application Areas
Power conversion
Motor control
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation or replacement announced
Key Reasons to Choose This Product
High-voltage and high-power capability
Low on-resistance for efficient power conversion
Wide operating temperature range for reliability
Compact DPAK surface mount package for easy integration