Manufacturer Part Number
STD4N52K3
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET transistor
Designed for high-efficiency power conversion applications
Product Features and Performance
Wide operating voltage range (up to 525V)
Low on-resistance (2.6Ω @ 1.25A, 10V)
High current capability (2.5A continuous drain current at 25°C)
Low gate charge (2nC @ 10V)
High temperature operation (up to 150°C junction temperature)
Surface mount DPAK packaging
Product Advantages
Efficient power conversion
Compact and space-saving design
Reliable high-temperature operation
Ease of integration in power electronics systems
Key Technical Parameters
Drain-Source Voltage (Vdss): 525V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2.6Ω
Drain Current (Id): 2.5A
Input Capacitance (Ciss): 334pF
Power Dissipation (Tc): 45W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for use in a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Switch-mode power supplies
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
High efficiency and power density
Reliable high-temperature operation
Easy integration into power electronics systems
Competitive pricing and availability
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