Manufacturer Part Number
STD4N80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel MOSFET transistor
Product Features and Performance
Drain-to-source voltage (Vdss) of 800V
Low on-resistance (Rds(on)) of 2.5Ω at 1.5A, 10V
High continuous drain current (Id) of 3A at 25°C
Low input capacitance (Ciss) of 175pF at 100V
Power dissipation (Ptot) of 60W at 25°C
Product Advantages
Excellent switching performance
High voltage handling capability
Low conduction losses
Compact DPAK package
Key Technical Parameters
Vdss: 800V
Rds(on): 2.5Ω
Id: 3A
Ciss: 175pF
Ptot: 60W
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-power applications
Compatibility
Compatible with a wide range of high-voltage, high-power electronic circuits and systems
Application Areas
Switching power supplies
Inverters
Motor drives
Industrial control equipment
Product Lifecycle
This product is currently in production and readily available
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent high-voltage, high-power performance
Low on-resistance for efficient operation
Compact and space-saving DPAK package
Robust and reliable design for industrial applications
RoHS compliance for environmental sustainability
STD4NB25T4STMicroelectronics
STD4A60S