Manufacturer Part Number
STD4N62K3
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
SuperMESH3 Series
N-Channel MOSFET
Surface Mount Packaging (DPAK)
High Voltage (620V Drain-Source Voltage)
Low On-Resistance (1.95Ω @ 1.9A, 10V)
High Current Capability (3.8A Continuous Drain Current @ 25°C)
Wide Operating Temperature Range (-55°C to 150°C)
Low Input Capacitance (450pF @ 50V)
High Power Dissipation (70W @ Tc)
Product Advantages
Efficient power conversion with low losses
Suitable for high voltage, high power applications
Compact surface mount package
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 620V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.95Ω @ 1.9A, 10V
Continuous Drain Current (Id): 3.8A @ 25°C
Input Capacitance (Ciss): 450pF @ 50V
Power Dissipation (Pd): 70W @ Tc
Quality and Safety Features
ROHS3 Compliant
Tape and Reel Packaging
Compatibility
Suitable for a wide range of high voltage, high power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial electronics
Automotive electronics
Product Lifecycle
Current product
Availability of replacements or upgrades may vary, check with manufacturer
Key Reasons to Choose This Product
High voltage and current capability
Low on-resistance for efficient power conversion
Compact surface mount package for space-constrained designs
Robust and reliable operation across a wide temperature range
Compliance with industry standards (ROHS3)