Manufacturer Part Number
STD2N80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel power MOSFET
Product Features and Performance
800V drain-source voltage
5Ω maximum on-resistance at 1A, 10V
2A continuous drain current at 25°C
95pF maximum input capacitance at 100V
45W maximum power dissipation at Tc
Product Advantages
Excellent power conversion efficiency
Robust and reliable performance
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.5Ω @ 1A, 10V
Drain Current (Id): 2A @ 25°C
Input Capacitance (Ciss): 95pF @ 100V
Power Dissipation (Pd): 45W @ Tc
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Surface mount
Application Areas
High-voltage, high-power switching applications
Switch-mode power supplies
Motor drives
Inverters
Switched-mode regulators
Product Lifecycle
Current product
No information on discontinuation or replacement
Key Reasons to Choose This Product
Excellent power conversion efficiency
Robust and reliable performance
Suitable for high-voltage, high-power applications
Wide operating temperature range
Surface mount compatibility