Manufacturer Part Number
STD2LN60K3
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor for power management applications
Product Features and Performance
600V Drain-to-Source Voltage
2A Continuous Drain Current
5Ω Maximum On-Resistance
235pF Maximum Input Capacitance
45W Maximum Power Dissipation
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
SuperMESH3 technology for superior performance
Robust and reliable construction
Excellent thermal management
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.5Ω @ 1A, 10V
Drain Current (Id): 2A @ 25°C
Input Capacitance (Ciss): 235pF @ 50V
Power Dissipation (Tc): 45W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount DPAK (TO-252-3) package
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
High-voltage, high-current handling capability
Low on-resistance for improved efficiency
Robust and reliable performance
Suitable for a wide range of power management applications
Readily available and supported by the manufacturer