Manufacturer Part Number
STD2HNK60Z-1
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
600V Drain-to-Source Voltage
±30V Gate-to-Source Voltage
8Ω On-State Resistance
2A Continuous Drain Current
280pF Input Capacitance
45W Power Dissipation
-55°C to 150°C Operating Temperature
Product Advantages
High Breakdown Voltage
Low On-State Resistance
Suitable for High-Voltage, High-Power Applications
Key Technical Parameters
Drain-to-Source Voltage: 600V
Gate-to-Source Voltage: ±30V
On-State Resistance: 4.8Ω
Continuous Drain Current: 2A
Input Capacitance: 280pF
Power Dissipation: 45W
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
TO-251 (IPAK) Package
Compatibility
Fits in TO-251-3 Short Leads, IPak, TO-251AA package
Application Areas
High-Voltage, High-Power Switching Applications
Power Supplies
Motor Drives
Industrial Electronics
Product Lifecycle
Currently in production
Replacement or upgrade models may be available in the future
Key Reasons to Choose this Product
High Breakdown Voltage
Low On-State Resistance
Suitable for High-Power, High-Voltage Applications
RoHS3 Compliant
TO-251 (IPAK) Package for Easy Mounting