STD2N62K3 - STMicroelectronics

Manufacturer Part Number

STD2N62K3

Manufacturer

STMicroelectronics

Introduction

High-performance N-Channel MOSFET with low on-resistance and high voltage rating

Product Features and Performance

High voltage rating up to 620V

Low on-resistance of 3.6Ω @ 1.1A, 10V

Continuous drain current of 2.2A at 25°C

Wide operating temperature range up to 150°C

Low input capacitance of 340pF @ 50V

Low gate charge of 15nC @ 10V

Product Advantages

Excellent efficiency and low power dissipation

Robust and reliable performance

Suitable for high-voltage, high-power applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 620V

Gate to Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 3.6Ω @ 1.1A, 10V

Continuous Drain Current (Id): 2.2A @ 25°C

Input Capacitance (Ciss): 340pF @ 50V

Power Dissipation (Pd): 45W

Quality and Safety Features

RoHS3 compliant

DPAK package for surface mount

Compatibility

Can be used as a replacement or upgrade for similar N-Channel MOSFET applications

Application Areas

Switching power supplies

Motor drives

Industrial and consumer electronics

Product Lifecycle

Currently in production

No known discontinuation plans

Replacement or upgrade options available

Key Reasons to Choose This Product

Excellent efficiency and low power dissipation

High voltage and current handling capabilities

Robust and reliable performance in harsh environments

Suitable for a wide range of high-power applications

Easy to integrate and implement in design