Manufacturer Part Number
STD2HNK60Z
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
High drain-source breakdown voltage
Low on-resistance
Fast switching speed
High power density
Suitable for high-frequency switching applications
Product Advantages
Excellent efficiency
Reliable performance
Compact design
Easy to integrate
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Maximum gate-to-source voltage (Vgs(max)): ±30V
On-resistance (Rds(on)): 4.8Ω @ 1A, 10V
Continuous drain current (Id): 2A @ 25°C
Input capacitance (Ciss): 280pF @ 25V
Power dissipation (Tc): 45W
Quality and Safety Features
Compliant with RoHS 3 directive
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
Surface mount DPAK (TO-252-3) package
Compatible with various high-frequency power conversion applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Welding equipment
Home appliances
Product Lifecycle
Currently available
No discontinuation plans
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and reliability
Compact and easy-to-integrate design
Suitable for high-frequency, high-power applications
Wide operating temperature range
Proven performance in various power electronics systems
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