Manufacturer Part Number
PSMN1R0-40SSHJ
Manufacturer
Nexperia
Introduction
High-performance N-channel MOSFET with ultra-low on-resistance for high-power density applications
Product Features and Performance
Ultra-low on-resistance for efficient power conversion
High current capability up to 325A
Wide operating temperature range of -55°C to 175°C
Fast switching for high-frequency operation
Low gate charge and gate-source threshold voltage
Product Advantages
Excellent thermal management and power dissipation
Reduced power losses and improved system efficiency
Supports high-density, high-power applications
Reliable and robust design for demanding environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1mΩ @ 25A, 10V
Continuous Drain Current (Id): 325A @ 25°C
Input Capacitance (Ciss): 10,322pF @ 25V
Gate Charge (Qg): 137nC @ 10V
Quality and Safety Features
RoHS3 compliant
LFPAK88 (SOT1235) package for high reliability and thermal performance
Schottky diode body for fast switching and low losses
Compatibility
Compatible with a wide range of high-power, high-frequency applications
Application Areas
High-efficiency power supplies
Industrial motor drives
Automotive electronics
Renewable energy systems
Telecommunications infrastructure
Product Lifecycle
This product is currently in production and readily available
Replacement or upgraded models may be available in the future, but this specific model is not nearing discontinuation
Key Reasons to Choose This Product
Exceptional power efficiency and performance
Robust and reliable design for demanding applications
Versatile compatibility and suitability for a wide range of high-power systems
Comprehensive technical specifications and features to meet diverse requirements
Proven track record of quality and safety from a reputable manufacturer
PSMN1R1-25YLCFreescale / NXP Semiconductors