Manufacturer Part Number
PSMN1R0-25YLDX
Manufacturer
Nexperia
Introduction
High-performance, high-power N-channel MOSFET transistor
Product Features and Performance
Extremely low on-state resistance (0.89 mΩ)
High current handling capacity (100 A continuous drain current)
High power dissipation (160 W)
Fast switching speed and low gate charge (71.8 nC)
Wide operating temperature range (-55°C to 175°C)
Schottky body diode
Product Advantages
Excellent power efficiency and thermal management
Reliable and robust performance
Suitable for high-power, high-frequency switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 25 V
Gate-to-source voltage (Vgs): ±20 V
On-state resistance (Rds(on)): 0.89 mΩ @ 25 A, 10 V
Input capacitance (Ciss): 5308 pF @ 12 V
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Surface mount package (LFPAK56, Power-SO8)
Tape and reel packaging
Application Areas
High-power switching applications
Automotive electronics
Industrial power conversion
Telecommunications infrastructure
Product Lifecycle
Current production, no known plans for discontinuation
Replacement or upgrade options available from Nexperia
Key Reasons to Choose This Product
Exceptional power efficiency and thermal performance
Robust and reliable operation across a wide temperature range
Compact and easy-to-use surface mount package
Suitable for high-power, high-frequency switching applications
Backed by Nexperia's expertise in power semiconductor technology