Manufacturer Part Number
PSMN1R0-30YLC,115
Manufacturer
Nexperia
Introduction
High-performance N-channel MOSFET with low on-resistance and high current capability
Product Features and Performance
Low on-resistance of 1.15 mΩ at 25 A, 10 V gate-source voltage
High continuous drain current of 100 A at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 6645 pF at 15 V drain-source voltage
High power dissipation of 272 W at 25°C case temperature
Product Advantages
Excellent thermal performance and high current capability
Compact LFPAK56 and Power-SO8 package options
Suitable for high-power, high-efficiency switching applications
Key Technical Parameters
Drain-Source Voltage (VDS): 30 V
Gate-Source Voltage (VGS): ±20 V
Drain Current (ID): 100 A
On-Resistance (RDS(on)): 1.15 mΩ
Input Capacitance (Ciss): 6645 pF
Power Dissipation (Ptot): 272 W
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Compatible with a wide range of power electronics and switching applications
Application Areas
Switch-mode power supplies
Motor drives
Electric vehicle (EV) charging systems
Industrial and consumer electronics
Product Lifecycle
This is an active product, not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal performance and high current capability
Compact package options suitable for high-density designs
Low on-resistance for high-efficiency power conversion
Wide operating temperature range for versatile applications
RoHS3 compliance for use in environmentally-conscious designs
PSMN130-200D+118Freescale / NXP Semiconductors