Manufacturer Part Number
PSMN1R0-40YLDX
Manufacturer
Nexperia
Introduction
The PSMN1R0-40YLDX is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
40V drain-to-source voltage rating
Very low on-resistance of 1.1 mΩ
High continuous drain current of 280A at 25°C
Fast switching speed with low input capacitance of 8845 pF
Wide operating temperature range of -55°C to 150°C
High power dissipation capability of 198W
Product Advantages
Excellent performance-to-cost ratio
High efficiency and low power losses
Compact surface-mount LFPAK56 and Power-SO8 package options
Suitable for a wide range of power conversion and control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.1 mΩ @ 25A, 10V
Continuous Drain Current (Id): 280A @ 25°C
Input Capacitance (Ciss): 8845 pF @ 20V
Power Dissipation (Ptot): 198W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for use in safety-critical applications
Compatibility
This MOSFET is compatible with a wide range of power electronics and control systems.
Application Areas
Power conversion and control
Motor drives
Switch-mode power supplies
Inverters and converters
Industrial and automotive electronics
Product Lifecycle
The PSMN1R0-40YLDX is a current production device and is not nearing discontinuation. Replacement or upgraded products may become available in the future.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
High efficiency and low power losses
Wide operating temperature range
Compact surface-mount package options
Suitable for a wide range of power conversion and control applications
PSMN1R1-25YLC115Freescale / NXP Semiconductors