Manufacturer Part Number
PSMN1R0-30YLDX
Manufacturer
Nexperia
Introduction
High-performance N-channel MOSFET designed for high-power, high-efficiency switching applications.
Product Features and Performance
Low on-resistance (RDS(on)) of 1.02 mΩ at 25 A, 10 V
High continuous drain current (ID) of 100 A at 25°C
High power dissipation of 238 W at Tc
Wide operating temperature range of -55°C to 175°C
Fast switching speed and low gate charge (Qg) of 121.35 nC at 10 V
Product Advantages
Excellent thermal performance and power handling
Efficient power conversion and low energy losses
Reliable and robust design for demanding applications
Suitable for high-power, high-frequency switching circuits
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30 V
Gate-to-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID) at 25°C: 100 A
Input Capacitance (Ciss) at 15 V: 8598 pF
Threshold Voltage (VGS(th)) at 2 mA: 2.2 V
Quality and Safety Features
RoHS3 compliant
LFPAK56 or Power-SO8 package for high thermal and electrical performance
Robust and reliable design for demanding applications
Compatibility
Suitable for a wide range of high-power, high-frequency switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Battery management systems
Industrial automation and control
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent thermal and power handling capabilities
Efficient power conversion with low energy losses
Reliable and robust design for demanding applications
Suitable for a wide range of high-power, high-frequency switching applications
Compatibility with various industrial and consumer electronics applications
PSMN1R0-25YLDFreescale / NXP Semiconductors