Manufacturer Part Number
APTGT35SK120D1G
Manufacturer
Microsemi
Introduction
High-performance trench field stop IGBT module designed for power electronics applications
Product Features and Performance
Trench field stop IGBT technology for high efficiency and low switching losses
1200V collector-emitter breakdown voltage
55A maximum collector current
Low Vce(on) of 2.1V at 15V gate voltage and 35A collector current
Wide operating temperature range of -40°C to 150°C
Product Advantages
Efficient and reliable power switching
Compact and robust design
Suitable for high-power applications
Key Technical Parameters
IGBT Type: Trench Field Stop
Input: Standard
Configuration: Single
Input Capacitance (Cies): 2.5 nF @ 25V
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 55A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Current Collector Cutoff (Max): 5mA
Quality and Safety Features
RoHS compliant
Designed and manufactured to meet high quality and safety standards
Compatibility
Suitable for a wide range of power electronics applications, including inverters, converters, and motor drives
Application Areas
Industrial automation
Renewable energy systems
Electric vehicle charging infrastructure
Power supplies
Product Lifecycle
The APTGT35SK120D1G is an actively supported product by Microsemi and is not nearing discontinuation.
Replacement and upgrade options may be available from Microsemi as technology advances.
Key Reasons to Choose This Product
Highly efficient and reliable trench field stop IGBT technology
Wide operating temperature range and robust design
Compact and versatile package suitable for various applications
Manufactured to high quality and safety standards
Ongoing support and potential for future upgrades from Microsemi