Manufacturer Part Number
APTGT30H60T1G
Manufacturer
Microchip Technology
Introduction
Discrete semiconductor product
Transistor IGBT (Insulated Gate Bipolar Transistor) Module
Product Features and Performance
Trench field stop IGBT technology
Standard input configuration
Full bridge inverter configuration
6 nF input capacitance (Cies) at 25 V
600 V collector-emitter breakdown voltage
50 A maximum collector current
9 V maximum collector-emitter saturation voltage at 15 V gate-emitter voltage and 30 A collector current
250 A maximum collector cutoff current
-40°C to 175°C operating temperature range
90 W maximum power
Product Advantages
Robust and reliable performance
Efficient power conversion
Wide operating temperature range
Key Technical Parameters
IGBT type: Trench field stop
Input configuration: Standard
Package: SP1 (Chassis mount)
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 50 A
Vce(on) (Max) @ Vge, Ic: 1.9 V @ 15 V, 30 A
Current Collector Cutoff (Max): 250 A
Operating Temperature: -40°C ~ 175°C (TJ)
Power Max: 90 W
Quality and Safety Features
RoHS3 compliant
NTC thermistor for temperature monitoring
Compatibility
Suitable for various power conversion and motor control applications
Application Areas
Industrial
Renewable energy
Home appliances
Automotive
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
Robust and reliable Trench field stop IGBT technology
Wide operating temperature range
Efficient power conversion performance
RoHS3 compliance for environmental responsibility
NTC thermistor for enhanced safety and reliability
