Manufacturer Part Number
APTGT35A120D1G
Manufacturer
Microsemi
Introduction
Discrete Semiconductor Product - Trench Field Stop IGBT Module
Product Features and Performance
Trench Field Stop IGBT technology
Half bridge configuration
Standard input
205W power rating
1200V collector-emitter breakdown voltage
55A max collector current
1V max collector-emitter saturation voltage
No NTC thermistor
Product Advantages
Reliable trench field stop IGBT design
Efficient thermal performance
Robust power handling capability
Suitable for a variety of industrial applications
Key Technical Parameters
Collector-emitter breakdown voltage: 1200V
Max collector current: 55A
Max collector-emitter saturation voltage: 2.1V
Input capacitance: 2.5nF
Power rating: 205W
Quality and Safety Features
RoHS compliant
Chassis mount package
Compatibility
Suitable for use in industrial power electronics applications
Application Areas
Motor drives
Power inverters
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating systems
Product Lifecycle
Current production, no discontinuation plans known
Key Reasons to Choose This Product
Reliable trench field stop IGBT technology
Efficient thermal performance for high power applications
Robust design for industrial environments
Suitable for a wide range of power electronics applications
