Manufacturer Part Number
APTGT30A170D1G
Manufacturer
Microsemi
Introduction
High-performance insulated-gate bipolar transistor (IGBT) module
Product Features and Performance
Trench field-stop IGBT technology
Half-bridge configuration
Standard input
210 W power rating
1700 V collector-emitter breakdown voltage
45 A maximum collector current
4 V maximum collector-emitter saturation voltage @ 15 V gate, 30 A
5 nF input capacitance @ 25 V
Product Advantages
Efficient power conversion
High voltage and current handling
Compact and reliable design
Key Technical Parameters
IGBT Type: Trench Field Stop
Input: Standard
Configuration: Half Bridge
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1700 V
Current Collector (Ic) (Max): 45 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Current Collector Cutoff (Max): 3 mA
Quality and Safety Features
RoHS compliant
Chassis mount design for secure installation
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Power inverters
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Currently available
No planned discontinuation
Key Reasons to Choose This Product
Highly efficient power conversion
Robust and reliable performance
Compact and versatile design
Proven Microsemi technology
RoHS compliance for environmental sustainability
