Manufacturer Part Number
APTGT450A60G
Manufacturer
Microchip Technology
Introduction
High-performance insulated-gate bipolar transistor (IGBT) module designed for industrial and commercial applications.
Product Features and Performance
Trench field-stop IGBT technology for low conduction and switching losses
Wide operating temperature range of -40°C to 175°C
Rated for up to 1750W of power
Half-bridge configuration
Input capacitance (Cies) of 37nF at 25V
Collector-emitter breakdown voltage (VCES) of 600V
Collector current (IC) of up to 550A
Low collector-emitter saturation voltage (VCE(on)) of 1.8V at 15V gate voltage and 450A collector current
Product Advantages
Excellent efficiency and thermal performance
Compact and rugged design for industrial environments
Suitable for a wide range of power conversion and motor control applications
Key Technical Parameters
IGBT Type: Trench Field Stop
Input: Standard
Configuration: Half Bridge
Input Capacitance (Cies): 37nF @ 25V
Voltage Collector Emitter Breakdown (VCES): 600V
Current Collector (IC): 550A
Vce(on) (Max): 1.8V @ 15V, 450A
Quality and Safety Features
RoHS3 compliant
No NTC thermistor included
Compatibility
Chassis mount package
Application Areas
Industrial and commercial power conversion
Motor control
Renewable energy systems
Uninterruptible power supplies (UPS)
Welding equipment
Product Lifecycle
Current product offering, no information on discontinuation or replacements
Several Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
Wide operating temperature range for versatility in harsh environments
Robust and compact design for industrial applications
Suitable for a variety of power conversion and motor control needs
