APT58M50JCU3 - Microsemi Corporation

Manufacturer Part Number

APT58M50JCU3

Manufacturer

Microsemi

Introduction

High-performance N-channel MOSFET with superior switching characteristics and high power density.

Product Features and Performance

Able to handle continuous drain current of up to 58A at 25°C case temperature

Very low on-resistance of only 65mΩ @ 42A, 10V

Wide operating temperature range of -40°C to 150°C

High drain-to-source voltage rating of 500V

Low gate-to-source voltage of ±30V

Fast switching speed with low gate charge of 340nC @ 10V

High power dissipation capability of up to 543W at 25°C case temperature

Product Advantages

Excellent thermal management and power handling capabilities

Superior switching performance for high-efficiency power conversion

Robust design for reliable operation in demanding applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 500V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 65mΩ @ 42A, 10V

Continuous Drain Current (Id): 58A @ 25°C case temperature

Input Capacitance (Ciss): 10800pF @ 25V

Power Dissipation (Pd): 543W @ 25°C case temperature

Quality and Safety Features

Robust MOSFET design ensures long-term reliability

Compliance with relevant industry standards for safety and performance

Compatibility

Suitable for a wide range of power conversion and control applications

Application Areas

Switched-mode power supplies

Motor drives

Solar inverters

Industrial automation and control systems

Product Lifecycle

This product is currently in production and available for purchase

Replacements or upgrades may be available in the future as technology advances

Key Reasons to Choose This Product

High power density and efficiency for compact, high-performance power electronics

Excellent thermal management and reliability for demanding applications

Superior switching performance for improved system efficiency and responsiveness

Wide operating temperature range for use in diverse environmental conditions