Manufacturer Part Number
APT58M80J
Manufacturer
Microchip Technology
Introduction
High-voltage, high-power MOSFET transistor
Product Features and Performance
Drain to Source Voltage (Vdss): 800 V
Continuous Drain Current (Id): 60 A @ 25°C
On-State Resistance (Rds(on)): 110 mΩ @ 43 A, 10 V
Input Capacitance (Ciss): 17,550 pF @ 25 V
Power Dissipation (Tc): 960 W
Operating Temperature Range: -55°C to 150°C
Product Advantages
High voltage and current handling capability
Low on-state resistance for efficient power conversion
Suitable for high-power, high-frequency applications
Key Technical Parameters
N-Channel MOSFET
Vgs(th) (Max): 5 V @ 5 mA
Drive Voltage (Max Rds On, Min Rds On): 10 V
Gate Charge (Qg) (Max): 570 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Hermetically sealed SOT-227 package for reliability
Compatibility
SOT-227-4, miniBLOC package
SOT-227 package
Application Areas
Switch-mode power supplies
Motor drives
Induction heating
High-voltage, high-current applications
Product Lifecycle
This is an active product, with no indication of discontinuation.
Replacements and upgrades may be available from Microchip Technology.
Key Reasons to Choose This Product
High voltage and current handling capability for demanding power applications
Low on-state resistance for efficient power conversion
Suitable for high-power, high-frequency applications
Reliable and hermetically sealed packaging
Availability and support from Microchip Technology
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