Manufacturer Part Number
APT58M50J
Manufacturer
Microchip Technology
Introduction
High-performance MOSFET transistor designed for use in power conversion and control applications.
Product Features and Performance
N-channel MOSFET with 500V drain-to-source voltage rating
Low on-resistance of 65mΩ @ 42A, 10V
High continuous drain current of 58A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 13,500pF @ 25V
High power dissipation capability of 540W at 25°C case temperature
Product Advantages
Excellent efficiency and performance for power conversion applications
Robust design with high voltage and current handling capabilities
Compact ISOTOP package for efficient heat dissipation
Suitable for a wide range of operating temperatures
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 65mΩ @ 42A, 10V
Continuous Drain Current (Id): 58A @ 25°C
Input Capacitance (Ciss): 13,500pF @ 25V
Power Dissipation (Pd): 540W @ 25°C
Quality and Safety Features
RoHS3 compliant
ISOTOP package for efficient heat dissipation
Compatibility
This MOSFET is compatible with a wide range of power conversion and control applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from Microchip Technology.
Key Reasons to Choose This Product
High-performance MOSFET with excellent efficiency and power handling capabilities
Robust design with wide operating temperature range and high voltage/current ratings
Compact ISOTOP package for efficient heat dissipation and space-saving installation
Suitable for a wide range of power conversion and control applications
RoHS3 compliant for environmental compliance
APT5M65BBM19T3GMicrosemi