Manufacturer Part Number
APT6010JFLL
Manufacturer
Microchip Technology
Introduction
High-performance N-channel MOSFET power transistor
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 600 V
Low on-resistance (Rds(on)) of 100 mΩ @ 23.5 A, 10 V
Continuous Drain Current (Id) of 47 A at 25°C
Input Capacitance (Ciss) of 6710 pF at 25 V
Gate Charge (Qg) of 150 nC at 10 V
Product Advantages
Excellent energy efficiency due to low on-resistance
Robust design for reliable operation
Suitable for high-voltage, high-current applications
Key Technical Parameters
N-channel MOSFET technology
Vdss: 600 V
Rds(on): 100 mΩ @ 23.5 A, 10 V
Id: 47 A at 25°C
Ciss: 6710 pF at 25 V
Qg: 150 nC at 10 V
Quality and Safety Features
RoHS3 compliant
Packaged in ISOTOP (SOT-227-4, miniBLOC) package
Compatibility
Suitable for high-voltage, high-current applications
Can be used in power conversion, motor control, and industrial equipment
Application Areas
Power electronics
Motor drives
Industrial equipment
Renewable energy systems
Product Lifecycle
Current production model
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
Excellent energy efficiency due to low on-resistance
Robust and reliable design for demanding applications
Suitable for high-voltage, high-current operations
RoHS3 compliance for environmental safety
Compact ISOTOP package for efficient thermal management