Manufacturer Part Number
APT58M50JU3
Manufacturer
Microchip Technology
Introduction
High-performance N-channel MOSFET transistor designed for power switching applications
Product Features and Performance
Drain to source voltage (Vdss) of 500V
Continuous drain current (Id) of 58A at 25°C case temperature
On-state resistance (Rds(on)) of 65mΩ at 42A, 10V
Input capacitance (Ciss) of 10800pF at 25V
Power dissipation (Pd) of 543W at 25°C case temperature
Wide operating temperature range of -40°C to 150°C
Product Advantages
Excellent power handling capability
Low on-state resistance for high efficiency
Rugged and reliable performance
Key Technical Parameters
N-channel MOSFET
Vgs(th) of 5V at 2.5mA drain current
Gate-source voltage (Vgs) up to ±30V
Chassis mount package (SOT-227)
Quality and Safety Features
RoHS3 compliant
Microchip's advanced MOSFET manufacturing technology
Compatibility
Compatible with various power switching applications
Application Areas
Power supplies
Motor drives
Lighting ballasts
Industrial automation and control
Product Lifecycle
Currently in production
Replacement or upgrade options available from Microchip
Key Reasons to Choose This Product
High power handling and efficiency
Low on-state resistance for improved performance
Wide operating temperature range for versatile applications
Reliable and robust design for industrial environments
Compatibility with various power switching applications