Manufacturer Part Number
APT80M60J
Manufacturer
Microchip Technology
Introduction
High-performance N-Channel MOSFET with ultra-low on-state resistance.
Product Features and Performance
Operates at temperatures from -55°C to 150°C
Drain-to-Source voltage up to 600V
On-state resistance as low as 55mΩ at 60A, 10V
Continuous drain current up to 84A at 25°C
Input capacitance of 24,000pF at 25V
Power dissipation up to 960W at 25°C case temperature
Product Advantages
Excellent performance in high-power switching applications
Ultra-low on-state resistance for high efficiency
Wide operating temperature range
Robust and reliable design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 55mΩ @ 60A, 10V
Continuous Drain Current (Id): 84A @ 25°C
Input Capacitance (Ciss): 24,000pF @ 25V
Power Dissipation: 960W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
ISOTOP package for improved thermal performance and reliability
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation
Product Lifecycle
Currently in production
No plans for discontinuation
Key Reasons to Choose This Product
Excellent performance in high-power switching applications
Ultra-low on-state resistance for high efficiency
Wide operating temperature range
Robust and reliable design
RoHS3 compliance for environmental responsibility
Proven track record and technical support from Microchip Technology