APT80GP60JDQ3 - Microchip Technology

Manufacturer Part Number

APT80GP60JDQ3

Manufacturer

Microchip Technology

Introduction

High-performance, high-power IGBTs (Insulated Gate Bipolar Transistors) for industrial applications

Product Features and Performance

Power rating up to 462W

IGBT type: PT (Punch-Through)

Input type: Standard

Configuration: Single IGBT

Input capacitance (Cies) of 9.84nF at 25V

Collector-emitter breakdown voltage (BVCES) up to 600V

Maximum collector current (IC) of 151A

Maximum collector-emitter saturation voltage (VCE(on)) of 2.7V at 15V gate-emitter voltage and 80A collector current

Product Advantages

High power density

High efficiency

Reliable performance

Suitable for industrial applications

Key Technical Parameters

Power rating: 462W

IGBT type: PT

Input type: Standard

Configuration: Single

Input capacitance (Cies): 9.84nF @ 25V

Collector-emitter breakdown voltage (BVCES): 600V

Maximum collector current (IC): 151A

Maximum collector-emitter saturation voltage (VCE(on)): 2.7V @ 15V, 80A

Quality and Safety Features

RoHS3 compliant

Microchip's high-quality manufacturing and testing standards

Compatibility

Suitable for industrial applications such as motor drives, power supplies, and inverters

Application Areas

Industrial motor drives

Power supplies

Inverters

Other high-power industrial applications

Product Lifecycle

This product is currently in active production and not nearing discontinuation.

Replacement or upgrade options may be available from Microchip.

Several Key Reasons to Choose This Product

High power density and efficiency for industrial applications

Reliable performance and robust design

Compatibility with a wide range of industrial systems

Compliance with RoHS3 regulations for environmental responsibility

Availability of replacement and upgrade options from the manufacturer