Manufacturer Part Number
APT8075BN
Manufacturer
Microsemi
Introduction
High-performance power MOSFET transistor designed for use in a wide range of power conversion and control applications.
Product Features and Performance
High voltage rating of 800V
Low on-resistance of 750mΩ
Continuous drain current of 13A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching capability with low gate charge of 130nC
Robust design with high power dissipation of 310W
Product Advantages
Excellent efficiency and power density for power conversion designs
Reliable operation in harsh environments
Easy to drive and integrate into power circuits
Key Technical Parameters
Drain to Source Voltage (Vdss): 800V
Gate to Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 750mΩ @ 6.5A, 10V
Continuous Drain Current (Id): 13A at 25°C
Input Capacitance (Ciss): 2950pF @ 25V
Power Dissipation (Tc): 310W
Quality and Safety Features
Robust TO-247-3 package design
Compliance with industry safety standards
Rigorous quality control and testing
Compatibility
Suitable for a wide range of power conversion and control applications
Compatible with various gate driver circuits and control systems
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Inverters
Welding equipment
Industrial automation and control systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from Microsemi or alternative suppliers
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Fast switching performance for high-frequency applications
Reliable operation in demanding environments
Ease of integration and driving into power circuits
Comprehensive protection and safety features
Availability of technical support and product lifecycle management from Microsemi