Manufacturer Part Number
APT80GP60J
Manufacturer
Microchip Technology
Introduction
This product is a discrete semiconductor device, specifically a transistor in the IGBT (Insulated Gate Bipolar Transistor) module category.
Product Features and Performance
IGBT Type: PT (Punch-Through)
Input: Standard
Configuration: Single
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 600 V
NTC Thermistor: No
Current Collector (Ic) (Max): 151 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Current Collector Cutoff (Max): 1 mA
Power Max: 462 W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Product Advantages
Robust and reliable performance
Efficient power management
Suitable for a wide range of applications
Key Technical Parameters
Manufacturer Part Number: APT80GP60J
Manufacturer: Microchip Technology
Package / Case: ISOTOP
Series: POWER MOS 7
Package: Tube
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for various industrial and power electronic applications
Application Areas
Industrial power electronics
Inverters
Motor drives
Power converters
Product Lifecycle
This product is an active and ongoing part of Microchip Technology's product portfolio.
Several Key Reasons to Choose This Product
Robust and reliable performance
Efficient power management
Wide operating temperature range
Suitable for a variety of industrial and power electronic applications
RoHS3 compliant for environmental safety