Manufacturer Part Number
APT8M100B
Manufacturer
Microchip Technology
Introduction
The APT8M100B is a high-voltage, N-channel MOSFET transistor suitable for a wide range of power electronics applications.
Product Features and Performance
High drain-to-source voltage of 1000V
Low on-state resistance of 1.8Ω @ 4A, 10V
Continuous drain current of 8A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 60nC @ 10V
High power dissipation of 290W at Tc
Product Advantages
Excellent voltage handling capabilities
Low conduction losses
Efficient power conversion
Wide temperature tolerance
Robust and reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1000V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 1.8Ω @ 4A, 10V
Continuous Drain Current (Id): 8A at 25°C
Power Dissipation (Pd): 290W at Tc
Quality and Safety Features
ROHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting in a TO-247 package
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgraded products may be available in the future.
Key Reasons to Choose This Product
Excellent voltage handling and low on-state resistance for efficient power conversion
Wide operating temperature range and high power dissipation for reliable performance
Fast switching capability for high-frequency applications
Robust and RoHS-compliant design for quality and safety