Manufacturer Part Number
APT9F100B
Manufacturer
Microchip Technology
Introduction
High voltage N-channel MOSFET in a TO-247 package
Product Features and Performance
Withstands up to 1000V drain-to-source voltage
Supports up to 9A continuous drain current at 25°C case temperature
Very low on-state resistance of 1.6Ω at 5A, 10V gate-to-source voltage
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 80nC at 10V gate-to-source voltage
Product Advantages
High voltage and current handling capability
Extremely low on-state resistance for high efficiency
Wide temperature range for versatile applications
Fast switching for high-frequency power conversion
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1000V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 1.6Ω @ 5A, 10V
Continuous Drain Current (Id): 9A @ 25°C case temperature
Input Capacitance (Ciss): 2606pF @ 25V
Power Dissipation: 337W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
TO-247 metal package for improved thermal performance and reliability
Compatibility
Suitable for high-voltage, high-current power conversion applications such as:
Motor drives
Switched-mode power supplies
Inverters
Industrial controls
Application Areas
Industrial electronics
Automotive electronics
Renewable energy systems
Appliances
Product Lifecycle
This product is actively supported by Microchip Technology. There are no immediate plans for discontinuation, and replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent high-voltage and high-current handling capability
Extremely low on-state resistance for high efficiency power conversion
Wide operating temperature range for versatile applications
Fast switching performance for high-frequency power conversion
Reliable and thermally-efficient TO-247 metal package
RoHS3 compliance for environmentally-conscious designs
APTB1612-EF92Kingbright