TPS1120DR - Texas Instruments

Manufacturer Part Number

TPS1120DR

Manufacturer

Texas Instruments

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

RoHS3 Compliant

8-SOIC (0.154", 3.90mm Width) package

Tape & Reel (TR) packaging

Operating Temperature: -40°C ~ 150°C (TJ)

Power Max: 840mW

Configuration: 2 P-Channel (Dual)

Drain to Source Voltage (Vdss): 15V

Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V

Technology: MOSFET (Metal Oxide)

Current Continuous Drain (Id) @ 25°C: 1.17A

FET Feature: Logic Level Gate

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V

Surface Mount Mounting Type

Product Advantages

RoHS3 compliant

Suitable for a variety of applications due to its performance specifications

Compact 8-SOIC package

Key Technical Parameters

Drain to Source Voltage (Vdss): 15V

Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V

Current Continuous Drain (Id) @ 25°C: 1.17A

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

Application Areas

Suitable for a variety of applications requiring discrete semiconductor products, such as transistors and MOSFETs

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Several Key Reasons to Choose This Product

RoHS3 compliant

Suitable performance specifications for a variety of applications

Compact 8-SOIC package