Manufacturer Part Number
TPS1100PWR
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Single P-Channel MOSFET Transistor
Product Features and Performance
Operating Temperature Range: -40°C to 150°C
Drain to Source Voltage (Vdss): 15V
Gate Voltage (Vgs): +2V/-15V
On-State Resistance (Rds(on)): 180mΩ @ 1.5A, 10V
Continuous Drain Current (Id): 1.27A @ 25°C
Power Dissipation: 504mW
Gate Charge (Qg): 5.45nC @ 10V
Product Advantages
MOSFET technology for high-efficiency power switching
Low on-state resistance for low power loss
Wide operating temperature range
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
Threshold Voltage (Vgs(th)): 1.5V @ 250μA
Drive Voltage: 2.7V (max Rds(on)), 10V (min Rds(on))
Quality and Safety Features
RoHS3 Compliant
8-TSSOP Package
Compatibility
Surface Mount Mounting
Application Areas
Power management
Switching circuits
Load switching
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose This Product
Efficient power switching performance
Low on-state resistance for low power loss
Wide operating temperature range
Small surface mount package
RoHS compliance for eco-friendly use