TPS1100DR - Texas Instruments

Manufacturer Part Number

TPS1100DR

Manufacturer

Texas Instruments

Introduction

P-channel MOSFET transistor

Suitable for power management and switching applications

Product Features and Performance

Drain to Source Voltage (Vdss) of 15V

Gate to Source Voltage (Vgs) range of +2V to -15V

On-resistance (Rds(on)) of 180 mΩ @ 1.5A, 10V

Continuous Drain Current (Id) of 1.6A @ 25°C

Power Dissipation (Max) of 791 mW

Gate Charge (Qg) of 5.45 nC @ 10V

Wide operating temperature range of -40°C to 150°C

Product Advantages

Compact 8-SOIC surface mount package

Suitable for power management and switching applications

Low on-resistance for improved efficiency

Wide operating temperature range

Key Technical Parameters

Drain to Source Voltage (Vdss): 15V

Gate to Source Voltage (Vgs) range: +2V to -15V

On-resistance (Rds(on)): 180 mΩ @ 1.5A, 10V

Continuous Drain Current (Id): 1.6A @ 25°C

Power Dissipation (Max): 791 mW

Gate Charge (Qg): 5.45 nC @ 10V

Operating Temperature Range: -40°C to 150°C

Quality and Safety Features

RoHS3 compliant

Conforms to industry standards

Compatibility

Can be used in a variety of power management and switching applications

Application Areas

Power management circuits

Switching applications

General purpose power electronics

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Compact surface mount package

Low on-resistance for improved efficiency

Wide operating temperature range

Suitable for a variety of power management and switching applications

RoHS3 compliant and conforms to industry standards