Manufacturer Part Number
TPS1101DR
Manufacturer
Texas Instruments
Introduction
Discrete semiconductor product
Single transistor MOSFET (P-channel)
Product Features and Performance
Operating temperature range: -40°C to 150°C
Drain-to-source voltage (Vdss): 15V
Gate-to-source voltage (Vgs): +2V, -15V
On-resistance (Rds(on)): 90mΩ @ 2.5A, 10V
Continuous drain current (Id): 2.3A @ 25°C
Power dissipation: 791mW
Gate charge (Qg): 11.25nC @ 10V
Product Advantages
Efficient power management
Reliable performance across wide temperature range
Low on-resistance for reduced power loss
Key Technical Parameters
MOSFET technology
P-channel FET type
Threshold voltage (Vgs(th)): 1.5V @ 250μA
Drive voltage (max Rds(on), min Rds(on)): 2.7V, 10V
Quality and Safety Features
RoHS3 compliant
Compatibility
8-SOIC package
Surface mount
Application Areas
Power management circuits
Switching applications
General-purpose amplifier and driver circuits
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose This Product
Efficient power handling with low on-resistance
Reliable operation over wide temperature range
Compact surface mount packaging