Manufacturer Part Number
CSD88599Q5DCT
Manufacturer
Texas Instruments
Introduction
The CSD88599Q5DCT is a high-performance N-channel MOSFET device from Texas Instruments' NexFET series, designed for efficient power conversion applications.
Product Features and Performance
2 N-Channel (Half Bridge) configuration
Drain-to-Source Voltage (Vdss) of 60V
Low Rdson of 2.1mOhm @ 30A, 10V
High Input Capacitance (Ciss) of 4840pF @ 30V
Low Vgs(th) of 2.5V @ 250A
Low Gate Charge (Qg) of 27nC @ 4.5V
Wide Operating Temperature range of -55°C to 150°C (TJ)
Maximum Power Dissipation of 12W
Product Advantages
Efficient power conversion with low conduction losses
Compact and space-saving 22-VSON-CLIP (5x6) package
Suitable for a variety of power management applications
Key Technical Parameters
MOSFET (Metal Oxide) Technology
Surface Mount Mounting Type
Tape & Reel (TR) Packaging
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a variety of power management applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial automation and control systems
Product Lifecycle
Currently available, with no known plans for discontinuation
Replacement or upgrade options may be available from Texas Instruments' product portfolio
Key Reasons to Choose This Product
Excellent power efficiency and low conduction losses
Compact and space-saving package
Wide operating temperature range
Reliable and RoHS-compliant design
Suitable for a variety of power management applications